Optoelectronic device including light transmissive regions, with light diffraction characteristics

ABSTRACT

An opto-electronic device comprises light transmissive regions extending through it along a first axis to allow passage of light therethrough. The transmissive regions may be arranged along a plurality of transverse configuration axes. Emissive regions may lie between adjacent transmissive regions along a plurality of configuration axes to emit light from the device. Each transmissive region has a lateral closed boundary having a shape to alter at least one characteristic of a diffraction pattern exhibited when light is transmitted through the device to mitigate interference by such pattern. An opaque coating may comprise at least one aperture defining a corresponding transmissive region to preclude transmission of light therethrough other than through the transmissive region(s). The device can form a face of a user device having a body and housing a transceiver positioned to receive light along at least one light transmissive region.

RELATED APPLICATIONS

The present application is a continuation of U.S. patent applicationSer. No. 17/622,213, filed Dec. 22, 2021; which is a 371 National StageEntry of International Application No. PCT/IB2020/056047, filed Jun. 25,2020, which claims the benefit of priority to U.S. Provisional PatentApplication No. 62/867,143 filed 26 Jun. 2019 and U.S. ProvisionalPatent Application No. 63/011,941 filed 17 Apr. 2020, the contents ofeach of which are incorporated herein by reference in their entirety.

TECHNICAL FIELD

The present disclosure relates to opto-electronic devices and inparticular to an opto-electronic device having light transmissiveregions extending therethrough.

BACKGROUND

In an opto-electronic device such as an organic light emitting diode(OLED), at least one semiconducting layer is disposed between a pair ofelectrodes, such as an anode and a cathode. The anode and cathode areelectrically coupled to a power source and respectively generate holesand electrons that migrate toward each other through the at least onesemiconducting layer. When a pair of holes and electrons combine, aphoton may be emitted.

OLED display panels may comprise a plurality of (sub-) pixels, each ofwhich has an associated pair of electrodes. Various layers and coatingsof such panels are typically formed by vacuum-based depositiontechniques.

In some applications, it may be desirable to make the devicesubstantially transparent therethrough, while still capable of emittinglight therefrom. In some applications, the device comprises a pluralityof light transmissive regions extending therethrough.

In some applications, the shape of the boundary of the lighttransmissive regions may impart a diffraction pattern to the lighttransmitted therethrough, which may distort the information contained inthe transmitted light or otherwise cause interference therewith.

It would be beneficial to provide an improved mechanism for providingtransparency through the device while facilitating mitigation ofinterference by the diffraction pattern.

BRIEF DESCRIPTION OF THE DRAWINGS

Examples of the present disclosure will now be described by reference tothe following figures, in which identical reference numerals indifferent figures indicate identical and/or in some non-limitingexamples, analogous and/or corresponding elements and in which:

FIG. 1 is a schematic diagram that shows an example cross-sectional viewof an example electro-luminescent device with example deposition stepsaccording to an example in the present disclosure;

FIG. 2 is a schematic diagram illustrating, in plan view, an example ofa transparent electro-luminescent device, having a plurality of emissiveregions and a plurality of light transmissive regions, arranged in atwo-dimensional array formation, according to an example in the presentdisclosure;

FIG. 3 is a schematic diagram that shows an example cross-sectional viewof an example version of the device of FIG. 1 respectively taken alonglines 38-38;

FIG. 4A is a schematic diagram that show an example cross-sectional viewof an example version of the device of FIG. 1 according to an example inthe present disclosure;

FIGS. 4B-4F are schematic diagrams that show example cross-sectionalviews of an example version of the device of FIG. 1 having an opaquecoating, according to various examples in the present disclosure;

FIGS. 5A-5I are schematic diagrams illustrating, in plan view, exampleclosed, non-polygonal boundaries of the light transmissive regions,according to an example in the present disclosure;

FIG. 6 is a schematic diagram illustrating, in plan view, of an exampleconfiguration of light transmissive regions in a repeating hexagonalarrangement, according to an example in the present disclosure;

FIG. 7 is a schematic diagram illustrating an example configuration foranalysis of example device samples, according to an example in thepresent disclosure;

FIG. 8A is an image of a diffraction pattern captured when an exampledevice sample fabricated according to an example in the presentdisclosure is submitted for analysis in the configuration of FIG. 7 ;

FIG. 8B is a schematic diagram of a diffraction pattern that correspondsto the image captured as FIG. 8A;

FIG. 9A is an image of a diffraction pattern captured when an exampledevice sample fabricated according to another example in the presentdisclosure is submitted for analysis in the configuration of FIG. 7 ;and

FIG. 9B is a schematic diagram of a diffraction pattern that correspondsto the image captured as FIG. 9A.

In the present disclosure, some elements or features may be identifiedby a reference numeral that may not be shown in any of the figuresprovided herein.

In the present disclosure, for purposes of explanation and notlimitation, specific details are set forth in order to provide athorough understanding of the present disclosure, including, withoutlimitation, particular architectures, interfaces and/or techniques. Insome instances, detailed descriptions of well-known systems,technologies, components, devices, circuits, methods and applicationsare omitted so as not to obscure the description of the presentdisclosure with unnecessary detail.

Further, it will be appreciated that block diagrams reproduced hereincan represent conceptual views of illustrative components embodying theprinciples of the technology.

Accordingly, the system and method components have been representedwhere appropriate by conventional symbols in the drawings, showing onlythose specific details that are pertinent to understanding the examplesof the present disclosure, so as not to obscure the disclosure withdetails that will be readily apparent to those of ordinary skill in theart having the benefit of the description herein.

Any drawings provided herein may not be drawn to scale and may not beconsidered to limit the present disclosure in any way.

Any feature or action shown in dashed outline may in some examples beconsidered as optional.

SUMMARY

It is an object of the present disclosure to obviate or mitigate atleast one disadvantage of the prior art.

The present disclosure discloses an opto-electronic device thatcomprises light transmissive regions extending through it along a firstaxis to allow passage of light therethrough. The transmissive regionsmay be arranged along a plurality of transverse configuration axes.Emissive regions may lie between adjacent transmissive regions along aplurality of configuration axes to emit light from the device. Eachtransmissive region has a lateral closed boundary having a shape toalter at least one characteristic of a diffraction pattern, exhibitedwhen light is transmitted through the device, to mitigate interferenceby such pattern. An opaque coating may comprise at least one aperturedefining a corresponding transmissive region to preclude transmission oflight therethrough other than through the transmissive region(s). Thedevice can form a face of a user device having a body and housing atransceiver positioned to receive light along at least one lighttransmissive region.

According to a broad aspect of the present disclosure, there isdisclosed an opto-electronic device comprising: a plurality of lighttransmissive regions, each extending through the device along a firstaxis, for allowing passage of light therethrough, the light transmissiveregions being arranged in a configuration extending along a plurality ofconfiguration axes, each of which is substantially transverse to thefirst axis; at least one emissive region disposed between adjacent lighttransmissive regions along a plurality of the configuration axes, foremitting light from the device; each light transmissive region beingdefined by a closed boundary in a lateral aspect transverse to the firstaxis that has a shape that alters at least one characteristic of adiffraction pattern exhibited when light is transmitted therethrough tofacilitate mitigating interference by such diffraction pattern.

In some non-limiting examples, the boundary may comprise at least onenon-linear segment. In some non-limiting examples, the boundary may besubstantially elliptical and/or substantially circular.

In some non-limiting examples, the diffraction characteristic may be anumber of spikes in the diffraction pattern. In some non-limitingexamples, the number of spikes may exceed at least one of 4, 6, 8, 10,12, 14 and/or 16.

In some non-limiting examples, the diffraction characteristic may be alength of a pattern boundary of the diffraction pattern. In somenon-limiting examples, a ratio of a pattern circumference of thediffraction pattern to the length of the pattern boundary of thediffraction pattern may exceed at least one of 0.4, 0.5, 0.6, 0.7, 0.75,0.8, 0.9 and/or 0.95.

In some non-limiting examples, a light transmittance across the at leastone light transmissive region may be substantially the same. In somenon-limiting examples, a light transmittance across the at least onelight transmissive region may vary by less than at least one of 20%,15%, 10%, 5%, 2.5% and/or 1%.

In some non-limiting examples, a light transmittance across theplurality of light transmissive regions may be substantially the same.In some non-limiting examples, a light transmittance across theplurality of light transmissive regions may vary by less than at leastone of 20%, 15%, 10%, 5%, 2.5% and/or 1%.

In some non-limiting examples, a light transmittance in at least one ofthe light transmissive regions may exceed at least one of 50%, 60%, 70%,80% and/or 90%. In some non-limiting examples, a light transmittancetherethrough in at least one of the emissive regions is less than aboutat least one of 50%, 40%, 30%, 20%, 10% and/or 5%.

In some non-limiting examples, the device may substantially precludetransmission of light therethrough other than through the at least onelight transmissive region. In some non-limiting examples, the device mayfurther comprise at least one opaque coating, for substantiallyprecluding transmission of light therethrough along the first axis andmay have at least one aperture defining a closed boundary of acorresponding at least one light transmissive region. In somenon-limiting examples, the opaque coating may be configured to filterlight transmitted through the at least one light transmissive region.

In some non-limiting examples, the device may further comprise: at leastone first electrode extending in a layer substantially transverse to thefirst axis and electrically coupled to at least one thin film transistor(TFT), at least one second electrode extending in a layer substantiallyparallel to the first electrode, and at least one semiconducting layerextending between the at least one first electrode and the at least onesecond electrode, wherein a stack comprising the at least one firstelectrode, the at least one second electrode and the at least onesemiconducting layer therebetween defines the at least one emissiveregion.

In some non-limiting examples, the at least one opaque coating may bedeposited over the at least one second electrode and may comprise atleast one opening to permit light emitted by the at least one emissiveregion to pass therethrough. In some non-limiting examples, the devicemay further comprise an encapsulation coating arranged between the atleast one second electrode and the at least one opaque coating. In somenon-limiting examples, the opaque coating may be deposited on a samelayer as the at least one second electrode and may further comprise atleast one opening to permit light emitted by the at least one emissiveregion to pass therethrough.

In some non-limiting examples, the device may further comprise asubstrate having a first surface on which the at least one firstelectrode has been deposited and a second opposed surface. In somenon-limiting examples, the opaque coating may be deposited on the firstsurface of the substrate. In some non-limiting examples, the at leastone TFT may be formed between the opaque coating and that at least onefirst electrode. In some non-limiting examples, the opaque coating maybe deposited on the second opposed surface of the substrate. In somenon-limiting examples, the opaque coating may be disposed between the atleast one emissive region and the substrate.

In some non-limiting examples, the device may further comprise at leastone pixel definition layer (PDL) deposited on a perimeter of the atleast one first electrode and defining an opening corresponding to theat least one emissive region to permit light emitted thereby to passtherethrough.

In some non-limiting examples, the at least one light transmissiveregion is substantially devoid of the at least one second electrode.

In some non-limiting examples, the at least one semiconducting layer mayextend across the at least one light transmissive region and apatterning coating may be disposed on an exposed surface thereof withinthe boundary of the at least one light transmissive region, to precludedeposition of a conductive coating thereon to form the at least onesecond electrode within the at least one light transmissive region. Insome non-limiting examples, the boundary of the at least one lighttransmissive region may be substantially devoid of the PDL.

In some non-limiting examples, a plurality of emissive regions may bedisposed between adjacent light transmissive regions. In somenon-limiting examples, the plurality of emissive regions may correspondto a pixel and each of the plurality of emissive regions may correspondto a sub-pixel thereof. In some non-limiting examples, each sub-pixelmay have an associated color and/or wavelength spectrum. In somenon-limiting examples each sub-pixel may correspond to a color that isat least one of red, green, blue and white.

In some non-limiting examples, the plurality of emissive regions may bearranged in a pixel array.

According to a broad aspect of the present disclosure, there isdisclosed an electronic device comprising: a layered opto-electronicdisplay defining a face of the device; and a transceiver within thedevice and positioned to exchange at least one electromagnetic signalacross the display; wherein the display comprises: a plurality of lighttransmissive regions, each extending through the display along a firstaxis substantially transverse to the face, for allowing passage oflight, incident on the face, therethrough, the light transmissiveregions being arranged in a configuration extending along a plurality ofconfiguration axes, each of which is substantially transverse to thefirst axis; at least one emissive region disposed between adjacent lighttransmissive regions along a plurality of the configuration axes, foremitting light from the display; each light transmissive region beingdefined by a closed boundary in a lateral aspect transverse to the firstaxis that has a shape that alters at least one characteristic of adiffraction pattern exhibited when light is transmitted therethrough tofacilitate mitigating interference by such diffraction pattern; and thetransceiver is positioned within the device to accept light passingthrough the display along at least one light transmissive region.

According to a broad aspect of the present disclosure, there isdisclosed an opto-electronic device comprising: an opaque coatingdisposed on a first layer surface of the device, comprising at least oneaperture having a closed boundary defining a corresponding at least onelight transmissive region extending through the device along a firstaxis transverse to the first layer surface, for allowing passage oflight therethrough; wherein each aperture has a shape that alters atleast one diffraction characteristic to reduce a diffraction effectexhibited when light is transmitted therethrough to facilitatemitigating interference by such diffraction pattern; and wherein theopaque coating substantially precludes transmission of lighttherethrough other than through the at least one light transmissiveregion.

In some non-limiting examples, a light transmittance across the at leastone light transmissive region may be substantially the same. In somenon-limiting examples, a light transmittance across the at least onelight transmissive region may vary by less than at least one of 20%,15%, 10%, 5%, 2.5% and/or 1%.

In some non-limiting examples, a light transmittance across theplurality of light transmissive regions may be substantially the same.In some non-limiting examples, a light transmittance across theplurality of light transmissive regions may vary by less than at leastone of 20%, 15%, 10%, 5%, 2.5% and/or 1%.

In some non-limiting examples, a light transmittance in the at least onelight transmissive region may exceed at least one of 50%, 60%, 70%, 80%and/or 90%. In some non-limiting examples, the opaque coating may reducelight transmission therethrough by at least one of 30%, 40%, 50%, 60%,70%, 80%, 90% and/or 95%.

In some non-limiting examples, the opaque coating may be configured tofilter light transmitted through the at least one light transmissiveregion.

In some non-limiting examples, the light transmissive regions may bealigned in a configuration extending along at least one configurationaxis.

In some non-limiting examples, the device may further comprise: at leastone first electrode extending in a layer substantially parallel to thefirst layer surface and electrically coupled to at least one thin filmtransistor (TFT), at least one second electrode extending in a layersubstantially parallel to the first layer surface, and at least onesemiconducting layer extending between the at least one first electrodeand the at least one second electrode, wherein a stack comprising the atleast one first electrode, the at least one second electrode and the atleast one semiconducting layer therebetween defines at least oneemissive region of the device for emitting light from the device.

In some non-limiting examples, a light transmittance therethrough in atleast one of the emissive regions may be less than about at least one of50%, 40%, 30%, 20%, 10% and/or 5%.

In some non-limiting examples, the opaque coating may be deposited overthe at least one second electrode and may further comprise at least oneopening to permit light emitted by the at least one emissive region topass therethrough. In some non-limiting examples, the device may furthercomprise an encapsulation coating arranged between the at least onesecond electrode and the opaque coating. In some non-limiting examples,the opaque coating may be deposited on a same layer as the at least onesecond electrode and may further comprise at least one opening to permitlight emitted by the at least one emissive region to pass therethrough.

In some non-limiting examples, the device may further comprise asubstrate having a first surface on which the at least one firstelectrode has been deposited and a second opposed surface. In somenon-limiting examples, the opaque coating may be deposited on the firstsurface of the substrate. In some non-limiting examples, the at leastone TFT may be formed between the opaque coating and the at least onefirst electrode. In some non-limiting examples, the opaque coating maybe deposited on the second opposed surface of the substrate. In somenon-limiting examples, the opaque coating may be disposed between the atleast one emissive region and the substrate.

In some non-limiting examples, the device may further comprise at leastone pixel definition layer (PDL) deposited on a perimeter of the atleast one first electrode and defining an opening corresponding to theat least one emissive region to permit light emitted thereby to passtherethrough.

In some non-limiting examples, the at least one light transmissiveregion may be substantially devoid of the at least one second electrode.

In some non-limiting examples, the at least one semiconducting layer mayextend across the at least one light transmissive region and apatterning coating may be disposed on an exposed surface thereof withinthe boundary of the at least one light transmissive region, to precludedeposition of a conductive coating thereon to form the at least onesecond electrode within the at least one light transmissive region. Insome non-limiting examples, the at least one aperture may besubstantially devoid of the PDL.

In some non-limiting examples, a plurality of emissive regions may bedisposed between adjacent light transmissive regions. In somenon-limiting examples, the plurality of emissive regions may correspondto a pixel and each of the plurality of emissive regions may correspondto a sub-pixel thereof. In some non-limiting examples, each sub-pixelmay have an associated color and/or wavelength spectrum. In somenon-limiting examples, each sub-pixel may correspond to a color that isat least one of red, green, blue and white.

In some non-limiting examples, the plurality of emissive regions may bearranged in a pixel array.

In some non-limiting examples, the boundary may comprise at least onenon-linear segment. In some non-limiting examples, the boundary may besubstantially elliptical and/or substantially circular.

In some non-limiting examples, the diffraction characteristic may be anumber of spikes in the diffraction pattern. In some non-limitingexamples, the number of spikes may exceed at least one of 4, 6, 8, 10,12, 14 and/or 16.

In some non-limiting examples, the diffraction characteristic may be alength of a pattern boundary of the diffraction pattern. In somenon-limiting examples, a ratio of a pattern circumference of thediffraction pattern to the length of the pattern boundary of thediffraction pattern may exceed at least one of 0.4, 0.5, 0.6, 0.7, 0.75,0.8, 0.9 and/or 0.95.

According to a broad aspect of the present disclosure, there isdisclosed an electronic device comprising: a layered opto-electronicdisplay defining a face of the device; and a transceiver within thedevice and positioned to exchange at least one electromagnetic signalacross the display; wherein the display comprises: an opaque coatingdisposed on a first layer surface of the display, comprising at leastone aperture having a closed boundary defining a corresponding at leastone light transmissive region extending through the device along a firstaxis transverse to the first layer surface, for allowing passage oflight, incident on the face, therethrough; wherein each aperture has ashape that alters at least one diffraction characteristic to reduce adiffraction effect exhibited when light is transmitted therethrough tofacilitate mitigating interference by such diffraction pattern; andwherein the opaque coating substantially precludes transmission of lighttherethrough other than through the at least one light transmissiveregion; and the transceiver is positioned within the device to acceptlight passing through the display along at least one light transmissiveregion.

Examples have been described above in conjunctions with aspects of thepresent disclosure upon which they can be implemented. Those skilled inthe art will appreciate that examples may be implemented in conjunctionwith the aspect with which they are described, but may also beimplemented with other examples of that or another aspect. When examplesare mutually exclusive, or are otherwise incompatible with each other,it will be apparent to those having ordinary skill in the relevant art.Some examples may be described in relation to one aspect, but may alsobe applicable to other aspects, as will be apparent to those havingordinary skill in the relevant art.

Some aspects or examples of the present disclosure may provide anopto-electronic device having light transmissive regions through itdefined by apertures, in an opaque coating, that have a non-polygonalshaped closed boundary to facilitate mitigation of interference fromdiffraction caused by the shape of the closed boundary.

DESCRIPTION

Opto-Electronic Device

The present disclosure relates generally to electronic devices, and morespecifically, to opto-electronic devices. An opto-electronic devicegenerally encompasses any device that converts electrical signals intophotons and vice versa.

In the present disclosure, the terms “photon” and “light” may be usedinterchangeably to refer to similar concepts. In the present disclosure,photons may have a wavelength that lies in the visible light spectrum,in the infrared (IR) and/or ultraviolet (UV) region thereof.Additionally, the term “light” may refer generally to anyelectromagnetic signal, whether or not having an associated wavelengthspectrum that is generally understood to correspond to that of visiblelight, and may include, in some non-limiting examples, depending uponcontext, a signal that lies in the UV, IR and/or near-IR wavelengthregions.

An organic opto-electronic device can encompass any opto-electronicdevice where one or more active layers and/or strata thereof are formedprimarily of an organic (carbon-containing) material, and morespecifically, an organic semiconductor material.

In the present disclosure, it will be appreciated by those havingordinary skill in the relevant art that an organic material, maycomprise, without limitation, a wide variety of organic molecules,and/or organic polymers. Further, it will be appreciated by those havingordinary skill in the relevant art that organic materials that are dopedwith various inorganic substances, including without limitation,elements and/or inorganic compounds, may still be considered to beorganic materials. Still further, it will be appreciated by those havingordinary skill in the relevant art that various organic materials may beused, and that the processes described herein are generally applicableto an entire range of such organic materials.

In the present disclosure, an inorganic substance may refer to asubstance that primarily includes an inorganic material. In the presentdisclosure, an inorganic material may comprise any material that is notconsidered to be an organic material, including without limitation,metals, glasses and/or minerals.

Where the opto-electronic device emits photons through a luminescentprocess, the device may be considered an electro-luminescent device. Insome non-limiting examples, the electro-luminescent device may be anorganic light-emitting diode (OLED) device. In some non-limitingexamples, the electro-luminescent device may be part of an electronicdevice. By way of non-limiting example, the electro-luminescent devicemay be an OLED lighting panel or module, and/or an OLED display ormodule of a computing device, such as a smartphone, a tablet, a laptop,an e-reader, and/or of some other electronic device such as a monitorand/or a television set (collectively “user device” 3950 (FIG. 4A)).

In some non-limiting examples, the opto-electronic device may be anorganic photo-voltaic (OPV) device that converts photons intoelectricity. In some non-limiting examples, the opto-electronic devicemay be an electro-luminescent quantum dot device. In the presentdisclosure, unless specifically indicated to the contrary, referencewill be made to OLED devices, with the understanding that suchdisclosure could, in some examples, equally be made applicable to otheropto-electronic devices, including without limitation, an OPV and/orquantum dot device in a manner apparent to those having ordinary skillin the relevant art.

The structure of such devices will be described from each of twoaspects, namely from a cross-sectional aspect and/or from a lateral(plan view) aspect.

In the present disclosure, the terms “layer” and “strata” may be usedinterchangeably to refer to similar concepts.

In the context of introducing the cross-sectional aspect below, thecomponents of such devices are shown in substantially planar lateralstrata. Those having ordinary skill in the relevant art will appreciatethat such substantially planar representation is for purposes ofillustration only, and that across a lateral extent of such a device,there may be localized substantially planar strata of differentthicknesses and dimension, including, in some non-limiting examples, thesubstantially complete absence of a layer, and/or layer(s) separated bynon-planar transition regions (including lateral gaps and evendiscontinuities). Thus, while for illustrative purposes, the device isshown below in its cross-sectional aspect as a substantially stratifiedstructure, in the plan view aspect discussed below, such device mayillustrate a diverse topography to define features, each of which maysubstantially exhibit the stratified profile discussed in thecross-sectional aspect.

Those having ordinary skill in the relevant art will appreciate thatwhen a component, a layer, a region and/or portion thereof is referredto as being “formed”, “disposed” and/or “deposited” on anotherunderlying material, component, layer, region and/or portion, suchformation, disposition and/or deposition may be directly and/orindirectly on an exposed layer surface 111 (at the time of suchformation, disposition and/or deposition) of such underlying material,component, layer, region and/or portion, with the potential ofintervening material(s), component(s), layer(s), region(s) and/orportion(s) therebetween.

In the present disclosure, a directional convention is followed,extending substantially normally relative to the lateral aspectdescribed above, in which the substrate 110 (FIG. 3 ) is considered tobe the “bottom” of the device 1000 (FIG. 1 ), and the layers 120 (FIG. 3), 130 (FIG. 3 ), 140 (FIG. 3 ) are disposed on “top” of the substrate110. Following such convention, the second electrode 140 is at the topof the device 1000 shown, even if (as may be the case in some examples,including without limitation, during a manufacturing process, in whichone or more layers 120, 130, 140 may be introduced by means of a vapordeposition process), the substrate 110 is physically inverted such thatthe top surface, on which one of the layers 120, 130, 140, such as,without limitation, the first electrode 120, is to be disposed, isphysically below the substrate 110, so as to allow the depositionmaterial (not shown) to move upward and be deposited upon the topsurface thereof as a thin film.

In some non-limiting examples, the device 1000 may be electricallycoupled to a power source (not shown). When so coupled, the device 1000may emit photons as described herein.

Thin Film Formation

The layers 120, 130, 140 may be disposed in turn on a target exposedlayer surface 111 (FIG. 1 ) (and/or, in some non-limiting examples,including without limitation, in the case of selective depositiondisclosed herein, at least one target region and/or portion of suchsurface) of an underlying material, which in some non-limiting examples,may be, from time to time, the substrate 110 and intervening lowerlayers 120, 130, 140, as a thin film. In some non-limiting examples, anelectrode 120, 140, 1750 (FIG. 3 ) may be formed of at least one thinconductive film layer of a conductive coating 830 (FIG. 1 ).

The thickness of each layer, including without limitation, layers 120,130, 140, and of the substrate 110, shown throughout the figures, isillustrative only and not necessarily representative of a thicknessrelative to another layer 120, 130, 140 (and/or of the substrate 110).

The formation of thin films during vapor deposition on an exposed layersurface 111 of an underlying material involves processes of nucleationand growth. During initial stages of film formation, a sufficient numberof vapor monomers (which in some non-limiting examples may be moleculesand/or atoms) typically condense from a vapor phase to form initialnuclei on the surface 111 presented, whether of the substrate 110 (or ofan intervening lower layer 120, 130, 140). As vapor monomers continue toimpinge on such surface, a size and density of these initial nucleiincrease to form small clusters or islands. After reaching a saturationisland density, adjacent islands typically will start to coalesce,increasing an average island size, while decreasing an island density.Coalescence of adjacent islands may continue until a substantiallyclosed film is formed.

While the present disclosure discusses thin film formation, in referenceto at least one layer or coating, in terms of vapor deposition, thosehaving ordinary skill in the relevant art will appreciate that, in somenon-limiting examples, various components of the electro-luminescentdevice 100 may be selectively deposited using a wide variety oftechniques, including without limitation, evaporation (including withoutlimitation, thermal evaporation and/or electron beam evaporation),photolithography, printing (including without limitation, ink jet and/orvapor jet printing, reel-to-reel printing and/or micro-contact transferprinting), physical vapor deposition (PVD) (including withoutlimitation, sputtering), chemical vapor deposition (CVD) (includingwithout limitation, plasma-enhanced CVD (PECVD) and/or organic vaporphase deposition (OVPD)), laser annealing, laser-induced thermal imaging(LITI) patterning, atomic-layer deposition (ALD), coating (includingwithout limitation, spin coating, dip coating, line coating and/or spraycoating) and/or combinations thereof. Some processes may be used incombination with a shadow mask, which may, in some non-limitingexamples, be an open mask and/or fine metal mask (FMM), duringdeposition of any of various layers and/or coatings to achieve variouspatterns by masking and/or precluding deposition of a deposited materialon certain parts of a surface of an underlying material exposed thereto.

In the present disclosure, the terms “evaporation” and/or “sublimation”may be used interchangeably to refer generally to deposition processesin which a source material is converted into a vapor, including withoutlimitation by heating, to be deposited onto a target surface in, withoutlimitation, a solid state. As will be understood, an evaporation processis a type of PVD process where one or more source materials areevaporated and/or sublimed under a low pressure (including withoutlimitation, a vacuum) environment and deposited on a target surfacethrough de-sublimation of the one or more evaporated source materials. Avariety of different evaporation sources may be used for heating asource material, and, as such, it will be appreciated by those havingordinary skill in the relevant art, that the source material may beheated in various ways. By way of non-limiting example, the sourcematerial may be heated by an electric filament, electron beam, inductiveheating, and/or by resistive heating. In some non-limiting examples, thesource material may be loaded into a heated crucible, a heated boat, aKnudsen cell (which may be an effusion evaporator source) and/or anyother type of evaporation source.

In the present disclosure, a reference to a layer thickness of amaterial, irrespective of the mechanism of deposition thereof, refers toan amount of the material deposited on a target exposed layer surface111, which corresponds to an amount of the material to cover the targetsurface with a uniformly thick layer of the material having thereferenced layer thickness. By way of non-limiting example, depositing alayer thickness of 10 nanometers (nm) of material indicates that anamount of the material deposited on the surface corresponds to an amountof the material to form a uniformly thick layer of the material that is10 nm thick. It will be appreciated that, having regard to the mechanismby which thin films are formed discussed above, by way of non-limitingexample, due to possible stacking or clustering of monomers, an actualthickness of the deposited material may be non-uniform. By way ofnon-limiting example, depositing a layer thickness of 10 nm may yieldsome parts of the deposited material having an actual thickness greaterthan 10 nm, or other parts of the deposited material having an actualthickness less than 10 nm. A certain layer thickness of a materialdeposited on a surface may thus correspond, in some non-limitingexamples, to an average thickness of the deposited material across thetarget surface.

In the present disclosure, a target surface (and/or target region(s)thereof) may be considered to be “substantially devoid of”,“substantially free of” and/or “substantially uncovered by” a materialif there is a substantial absence of the material on the target surfaceas determined by any suitable determination mechanism.

In the present disclosure, for purposes of simplicity of illustration,details of deposited materials, including without limitation, thicknessprofiles and/or edge profiles of layer(s) have been omitted.

Lateral Aspect

In some non-limiting examples, including where the OLED device 3700(FIG. 2 ) comprises a display module, the lateral aspect of the device3700 may be sub-divided into a plurality of emissive regions 1910 (FIG.3 ) of the device 3700, in which the cross-sectional aspect of thedevice structure 3700, within each of the emissive region(s) 1910,causes photons to be emitted therefrom when energized.

In some non-limiting examples, each emissive region 1910 of the device3700 corresponds to a single display pixel 340 (FIG. 2 ). In somenon-limiting examples, each pixel 340 emits light at a given wavelengthspectrum. In some non-limiting examples, the wavelength spectrumcorresponds to a colour in, without limitation, the visible lightspectrum.

In some non-limiting examples, each emissive region 1910 of the device3700 corresponds to a sub-pixel 2641-2643 (FIG. 2 ) of a display pixel340. In some non-limiting examples, a plurality of sub-pixels 2641-2643may combine to form, or to represent, a single display pixel 340.

In the present disclosure, the concept of a sub-pixel 2641-2643 may bereferenced herein, for simplicity of description only, as a sub-pixel264 x. Likewise, in the present disclosure, the concept of a pixel 340may be discussed in conjunction with the concept of at least onesub-pixel 264 x thereof. For simplicity of description only, suchcomposite concept is referenced herein as a “(sub-) pixel 340/264 x” andsuch term is understood to suggest either or both of a pixel 340 and/orat least one sub-pixel 264 x thereof, unless the context dictatesotherwise.

Non-Emissive Regions

In some non-limiting examples, the various emissive regions 1910 of thedevice 3700 are substantially surrounded and separated by, in at leastone lateral direction, one or more non-emissive regions 1920, in whichthe structure and/or configuration along the cross-sectional aspect, ofthe device structure 3700 shown, without limitation, in FIG. 3 , isvaried, so as to substantially inhibit photons to be emitted therefrom.In some non-limiting examples, the non-emissive regions 1920 comprisethose regions in the lateral aspect, that are substantially devoid of anemissive region 1910.

Thus, the lateral topology of the various layers of the at least onesemiconducting layer 130 may be varied to define at least one emissiveregion 1910, surrounded (at least in one lateral direction) by at leastone non-emissive region 1920.

In some non-limiting examples, the emissive region 1910 corresponding toa single display (sub-) pixel 340/264 x may be understood to have alateral aspect 410, surrounded in at least one lateral direction by atleast one non-emissive region 1920 having a lateral aspect 420.

Transmissivity

In some non-limiting examples, it may be desirable to make either orboth of the first electrode 120 and/or the second electrode 140substantially photon- (or light)-transmissive (“transmissive”), in somenon-limiting examples, at least across a substantial part of the lateralaspect 410 of the emissive region(s) 1910 of the device 3700. In thepresent disclosure, such a transmissive element, including withoutlimitation, an electrode 120, 140, a material from which such element isformed, and/or property of thereof, may comprise an element, materialand/or property thereof that is substantially transmissive(“transparent”), and/or, in some non-limiting examples, partiallytransmissive (“semi-transparent”), in some non-limiting examples, in atleast one wavelength range.

In some non-limiting examples, a mechanism to make the first electrode120, and/or the second electrode 140 transmissive is to form suchelectrode 120, 140 of a transmissive thin film.

Nucleation-Inhibiting and/or Promoting Material Properties

In some non-limiting examples, a conductive coating 830 (FIG. 1 ), thatmay be employed as, or as at least one of a plurality of layers of thinconductive films to form a device feature, including without limitation,at least one of the first electrode 120, the first electrode 140, anauxiliary electrode 1750 and/or a conductive element electricallycoupled thereto, may exhibit a relatively low affinity towards beingdeposited on an exposed layer surface 111 of an underlying material, sothat the deposition of the conductive coating 830 is inhibited.

The relative affinity or lack thereof of a material and/or a propertythereof to having a conductive coating 830 deposited thereon may bereferred to as being “nucleation-promoting” or “nucleation-inhibiting”respectively.

In the present disclosure, “nucleation-inhibiting” refers to a coating,material and/or a layer thereof that has a surface that exhibits arelatively low affinity for (deposition of) a conductive coating 830thereon, such that the deposition of the conductive coating 830 on suchsurface is inhibited.

In the present disclosure, “nucleation-promoting” refers to a coating,material and/or a layer thereof that has a surface that exhibits arelatively high affinity for (deposition of) a conductive coating 830thereon, such that the deposition of the conductive coating 830 on suchsurface is facilitated.

The term “nucleation” in these terms references the nucleation stage ofa thin film formation process, in which monomers in a vapor phasecondense onto the surface to form nuclei.

In the present disclosure, the terms “NIC” and “patterning coating” maybe used interchangeably to refer to similar concepts, and references toan NIC 810 (FIG. 1 ) herein, in the context of being selectivelydeposited to pattern a conductive coating 830 may, in some non-limitingexamples, be applicable to a patterning coating in the context ofselective deposition thereof to pattern an electrode coating. In somenon-limiting examples, reference to a patterning coating may signify acoating having a specific composition. In some non-limiting examples, apatterning coating, including without limitation, an NIC 810, may beused to selectively deposit a coating that is not electricallyconductive, including without limitation, an optical coating thatenhances and/or substantially precludes transmission of lighttherethrough, but in a manner similar to that described in FIG. 1herein.

In the present disclosure, the terms “conductive coating” and “electrodecoating” may be used interchangeably to refer to similar concepts andreferences to a conductive coating 830 herein, in the context of beingpatterned by selected deposition of an NIC 810 may, in some non-limitingexamples, be applicable to an electrode coating in the context of beingpatterned by selective deposition of a patterning coating. In somenon-limiting examples, reference to an electrode coating may signify acoating having a specific composition.

Turning now to FIG. 1 , there is shown an example electro-luminescentdevice 1000 with a number of additional deposition steps that aredescribed herein.

The device 1000 shows a lateral aspect of the exposed layer surface 111of the underlying material. The lateral aspect comprises a first portion1001 and a second portion 1002. In the first portion 1001, an NIC 810 isdisposed on the exposed layer surface 111. However, in the secondportion 1002, the exposed layer surface 111 is substantially devoid ofthe NIC 810.

After selective deposition of the NIC 810 across the first portion 1001,the conductive coating 830 is deposited over the device 1000, in somenon-limiting examples, using an open mask and/or a mask-free depositionprocess, but remains substantially only within the second portion 1002,which is substantially devoid of NIC 810.

The NIC 810 provides, within the first portion 1001, a surface with arelatively low initial sticking probability S₀, for the conductivecoating 830, and that is substantially less than the initial stickingprobability S₀, for the conductive coating 830, of the exposed layersurface 111 of the underlying material of the device 1000 within thesecond portion 1002.

Thus, the first portion 1001 is substantially devoid of the conductivecoating 830.

In this fashion, the NIC 810 may be selectively deposited, includingusing a shadow mask, to allow the conductive coating 830 to bedeposited, including without limitation, using an open mask and/or amask-free deposition process, so as to form a device feature, includingwithout limitation, at least one of the first electrode 120, the secondelectrode 140, the auxiliary electrode 1750 and/or at least one layerthereof, and/or a conductive element electrically coupled thereto.

Diffraction Reduction

In some non-limiting examples, the electro-luminescent device 3700 mayform a face 3940 (FIG. 4A) of a user device 3950 that houses at leastone transceiver 3970 (FIG. 4A) therewithin for exchanging at least oneelectromagnetic signal (“light”) through the face 3940 of the userdevice 3950. In some non-limiting examples, the at least oneelectromagnetic signal passing through the face 3940 of the user device3950 to and/or from the transceiver 3970 may have a wavelength spectrumthat lies, without limitation, in the visible light spectrum, in the IRspectrum, the near-IR spectrum and/or the UV spectrum.

In some non-limiting examples, such transceiver 3970 may comprise areceiver adapted to receive and process light passing through the face3940 from beyond the user device 3950. Non-limiting examples of suchtransceiver 3970 may be an under-display camera and/or a sensor,including without limitation, a fingerprint sensor, an optical sensor,an infrared proximity sensor, an iris recognition sensor and/or a facialrecognition sensor.

In some non-limiting examples, such transceiver 3970 may also emit lightpassing through the face 3940 beyond the user device 3950. Non-limitingexamples of such transceiver 3970 may be a fingerprint sensor, aninfrared proximity sensor and/or a facial recognition sensor, in whichsuch emitted light may be reflected off a surface and return through theface 3940 to be received by the transceiver 3970. In some non-limitingexamples, the transceiver 3970 may not emit light, but rather, theelectro-luminescent device 100 forming the face 3940 of the user device3950 may emit the light that is reflected off the surface and returnedthrough the face 3940 to be received by the transceiver 3970 and/or thelight that is returned through the face 3940 to be received by thetransceiver 3970 is not emitted at all by the user device 3950, butrather constitutes ambient light incident thereon.

To accommodate such transceiver 3970 within the user device 3950, theelectro-luminescent device 100 serving as a face 3940 of the user device3950 may include substantially light transmissive regions to allow thepassage of light to pass entirely therethrough, whether from beyond theuser device 3950 to within the user device 3950, or vice versa.

Those having ordinary skill in the relevant art will appreciate that,although not shown in the figure, in some non-limiting examples, thetransceiver 3970 may have a size that is greater than a single lighttransmissive region 2620. In some non-limiting examples, the transceiver3970 may be of a size so as to underlie not only a plurality of lighttransmissive regions 2620 and/or a plurality of emissive regions 1910extending therebetween. In such examples, the transceiver 3970 may bepositioned under such plurality of light transmissive regions 2620 andmay exchange light passing through the face 3940 through such pluralityof light transmissive regions 2620.

A non-limiting example is the substantially light transmissiveelectro-luminescent device 3700 shown in plan in the example schematicdiagram of FIG. 2 . The device 3700 comprises a plurality of lighttransmissive regions 2620, each being defined, within a lateral aspect420 of non-emissive region(s) 1920 defined by the surface of the device3700, by a closed boundary and/or perimeter 3701.

The light transmissive regions 2620 are configured to allow light topass through the device 3700 along a first axis 3702 that issubstantially transverse to the surface of the device 3700, which insome non-limiting examples, may be parallel to the face 3940 of the userdevice 3950.

In some non-limiting examples, the light transmittance across each lighttransmissive region 2620 is substantially the same. In some non-limitingexamples, the light transmittance in each light transmissive region 2620is greater than about 50%, greater than about 60%, greater than about70%, greater than about 80%, and/or greater than about 90%.

In some non-limiting examples, the light transmittance across each ofthe plurality of light transmissive regions 2620 and/or a subsetthereof, is substantially the same. In some non-limiting examples, thelight transmittance across each of the plurality of light transmissiveregions 2620 and/or a subset thereof, is greater than about 50%, greaterthan about 60%, greater than about 70%, greater than about 80%, and/orgreater than about 90%.

By way of non-limiting examples, the light transmissive regions 2620 maybe configured to transmit light in the visible range, near-IR rangeand/or IR range of the electromagnetic spectrum. In some non-limitingexamples, wavelengths in the IR range of the electromagnetic spectrummay extend between about 700 nm and about 1 mm, between about 750 nm andabout 5000 nm, between about 750 nm and about 3000 nm, between about 750nm and about 1400 nm, and/or between about 850 nm and about 1200 nm.

In some non-limiting examples, the light transmittance of theelectro-luminescent device 3700 in the light transmissive region(s) 2620may be greater than about 50%, greater than about 60%, greater thanabout 65%, greater than about 70%, greater than about 75%, greater thanabout 80%, greater than about 85%, greater than about 90% and/or greaterthan about 95%, for wavelengths in a range of the electromagneticspectrum of between about 400 nm and about 1400 nm, between about 420 nmand about 1200 nm, and/or between about 430 nm and about 1100 nm.

It has been discovered that, in some non-limiting examples, externallight incident on an opto-luminescent device 3700 and transmittedtherethrough may be impacted by a diffraction characteristic of adiffraction pattern imposed by the shape of the aperture 3920 (FIG. 4B)through which such light is transmitted therethrough.

At least in some non-limiting examples, electro-luminescent devices 3700that cause external light that is incident thereon to pass throughapertures 3920 therein that are shaped to exhibit a distinctive andnon-uniform diffraction pattern, may detrimentally interfere with thecapture of an image and/or light pattern represented thereby.

By way of non-limiting example, such diffraction pattern may impede anability to facilitate mitigating interference by such diffractionpattern, that is, to permit an optical sensor within a user device 3950to be able to accurately receive and process such image and/or lightpattern, even with the application of optical post-processing techniquesor to allow a viewer of such image and/or light pattern through suchdevice to discern information contained in such image and/or lightpattern.

In the device 3700, the light transmissive regions 2620 are arranged ina substantially planar configuration defined by a plurality ofconfiguration axes 3703, 3704, that are each substantially transverse tothe first axis 3702, that is, they lie in the plane defined by thesurface of the device 3700.

In some non-limiting examples, the configuration is an array is definedby at least two configuration axes, as shown in FIG. 2 , respectivelydesignated 3703 and 3704. In some non-limiting examples, theconfiguration axes 3703, 3704 are substantially normal to one anotherand to the first axis 3702.

At least one emissive region 1910 is disposed between adjacent lighttransmissive regions 2620 along a plurality of the configuration axes3703, 3704.

As shown, the emissive regions 1910 and the light transmissive regions2620 extend along each of such configuration axes 3703, 3704 in analternating pattern. In some non-limiting examples, such alternatingpattern is the same along each of such configuration axes 3703, 3704. Insome non-limiting examples, such alternating pattern comprises aplurality of emissive regions 1910 between adjacent, neighbouring and/orconsecutive light transmissive regions 2620. In some non-limitingexamples, such alternating pattern(s) may be repeated substantiallyidentically across the entire device 3700 or, in some non-limitingexamples, a portion thereof.

That is, in some non-limiting examples, the alternating pattern(s) maycomprise single pixels 340 (each comprising at least one emissive region1910 each corresponding to a single sub-pixel 264 x thereof) alternatingwith single light transmissive regions 2620.

In some non-limiting examples, each such pixel 340 comprises one, two,three, four, five or more emissive regions 1910 each corresponding to asingle sub-pixel 264 x thereof. In some non-limiting examples, eachsub-pixel 264 x is configured to emit light at a given color and/orwavelength spectrum.

In some non-limiting examples, the emissive region(s) 1910 correspondingto each such pixel 340, are arranged in a pixel array betweenneighbouring light transmissive regions 2620. In some non-limitingexamples, such pixel array of emissive regions 1910 are defined by atleast one axis that is parallel to at least one of the configurationaxes 3703, 3704 along which the alternating pattern(s) extend(s).

In some non-limiting examples, each such pixel 340 comprises foursub-pixels 264 x. In some non-limiting examples, the four sub-pixels 264x correspond to one sub-pixel 2641 configured to emit R(ed) light, twosub-pixels 2642 configured to emit G(reen) light and one sub-pixel 2643configured to emit B(lue) light. In some non-limiting examples, the foursub-pixels 264 x correspond to one sub-pixel 2641 configured to emitR(ed) light, one sub-pixel 2642 configured to emit G(reen) light, onesub-pixel 2643 configured to emit B(lue) light and one sub-pixel 264 xconfigured to emit W(hite) light.

In some non-limiting examples, especially when each pixel 340 comprisesa plurality of sub-pixels 264 x that is a number other than two or four,the sub-pixels 264 x of each such pixel 340 may be organized in apolygonal, circular and/or other configuration.

In some non-limiting examples, whether the sub-pixels 264 x of a givenpixel 340 are organized in an array or other configuration, suchconfiguration may be the same for each pixel 340. In some non-limitingexamples, such configuration may be similar in shape for differentpixels 340, differing only in the order of sub-pixels 264 x thereof. Insome non-limiting examples, such configuration may be similar in shapefor different pixels 340, differing only in the orientation of suchconfiguration. In some non-limiting examples, such configuration may bedifferent for different pixels 340.

In some non-limiting examples, the size and/or shape of sub-pixels 264 xconfigured to emit light of a given wavelength spectrum may be the sameor different. In some non-limiting examples, the size and/or shape ofsub-pixels 264 x configured to emit light of the same wavelengthspectrum may be the same or different. In some non-limiting examples,the shape of such sub-pixels 264 x may have a polygonal, circular and/orother shape.

In some non-limiting examples, the transmittance of external lightincident on emissive regions 1910 entirely through the device 3700, maybe less than about 50%, less than about 40%, less than about 30%, lessthan about 20%, less than about 10% and/or less than about 5%.

Turning now to FIG. 3 , there is shown a cross-sectional view of thedevice 3700 taken along line 38-38. The emissive region 1910 of asub-pixel 264 x comprises a first electrode 120 coupled to one or moreelectronic and/or opto-electronic components, including withoutlimitation, thin film transistor (TFT) transistors, resistors and/orcapacitors (collectively TFT structure 200), at least one semiconductinglayer 130 (or “organic layer” since such layers may comprise organicsemiconducting materials) that may comprise a plurality of layers, anyof which may be disposed, in some non-limiting examples, in a thin film,in a stacked configuration, which may include, without limitation, anyone or more of a hole injection layer (HIL), a hole transport layer(HTL), an emissive layer (EML), an electron transport layer (ETL) and/oran electron injection layer (EIL), disposed over the first electrode 120and a second electrode 140 disposed over the at least one semiconductinglayer 130. The device 3700 further comprises a PDL 440 covering at leasta perimeter of the first electrode 120. The PDL 440 defines an openingcorresponding to the emissive region 1910 of the sub-pixel 264 x. Thedevice 3700 further comprises a substrate 110 upon which the TFTstructure 200 is disposed. A TFT insulating layer 280 is provided overthe TFT structure 200 and the first electrode 120 is deposited on theTFT insulating layer 280 and configured to be electrically coupled withthe TFT structure 200.

In some non-limiting examples, the first electrode 120 may be an anode341 and the second electrode 140 may be a cathode 342.

In some non-limiting examples, the device 3700 is top-emitting, suchthat the second electrode 140 is transmissive and in some non-limitingexamples, the first electrode 120 is reflective, so as to allow lightemitted in the at least one semiconducting layer 130 to be transmittedthrough the second electrode 140 and away from the substrate 110.

In some non-limiting examples, the device 3700 is bottom-emitting.

In some non-limiting examples, the device 3700 comprises an auxiliarylayer disposed on the second electrode 140. In some non-limitingexamples, an encapsulation layer, which in some non-limiting examplesmay be a TFE layer 2050, is provided over the auxiliary layer.

In some non-limiting examples, the layers comprising the TFT structure200, the TFT insulating layer 280, the first electrode 120, the PDL 440,the at least one semiconducting layer 130, the second electrode 140, theauxiliary layer, and the encapsulation layer may make up a device region3705 of the device 3700. Although not shown, in some non-limitingexamples, the device region 3705 may comprise one or more additionallayers, including without limitation, a buffer layer 210, asemiconductor active area, a gate insulating layer 230, an electrodelayer for forming a source electrode and/or a drain electrode (TFTelectrode layer), an interlayer insulating layer 250 and/or aninsulating layer for forming the TFT structure 200.

In some non-limiting examples, the device 3700 further comprises anoutcoupling layer (not shown) arranged between the second electrode 140and the encapsulation layer.

In some non-limiting examples, the auxiliary layer comprises a cappinglayer. By way of non-limiting examples, such capping layer may act toenhance the outcoupling of light from the device 3700, thus increasingthe efficiency and/or brightness of the device 3700. In somenon-limiting examples, the auxiliary layer includes an electricallyconductive layer. In some non-limiting examples, the electricallyconductive layer may act as an auxiliary electrode 1750, which may beelectrically coupled to the second electrode 140. In some non-limitingexamples, the presence of such auxiliary electrode 1750 may reduce aneffective sheet resistance of the second electrode 120.

In some non-limiting examples, the auxiliary layer includes theproperties of both the capping layer and the auxiliary electrode 1750.In some non-limiting examples, the auxiliary layer includes atransparent conductive oxide (TCO), including without limitation, indiumzinc oxide (IZO), fluorine tin oxide (FTO), and/or indium tin oxide(ITO) and/or combinations thereof in at least one layer, any one or moreof which may be, without limitation, a thin film. Those having ordinaryskill in the relevant art will appreciate that in some non-limitingexamples, such TCOs may exhibit optical properties suited for use as thecapping layer, while also exhibiting electrical properties suited foruse as the auxiliary electrode 1750. In some non-limiting examples, theauxiliary layer is, or may include, an IZO layer having a thickness ofbetween 20 nm and about 100 nm, between about 25 nm and about 80 nmand/or between about 30 nm and about 60 nm. In some non-limitingexamples, the auxiliary layer may also include an organic material toact as the capping layer and/or a portion thereof.

Without wishing to be bound by any particular theory, it is postulatedthat including an auxiliary layer that exhibits the properties of thecapping layer and the auxiliary electrode 1750 may be advantageous insome non-limiting examples, in which: (i) the second electrode 140 ispatterned with discrete or discontinuous features, and/or (ii) thethickness of the second electrode 140 is relatively thin, such that thecurrent-resistance (IR) drop across the display 3700 without anauxiliary electrode 1750 may reduce device performance.

In some non-limiting examples, the auxiliary layer may be applied as acommon layer. In some non-limiting examples, the auxiliary layer isprovided in both the light transmissive regions 2620 and the emissiveregions 1910.

In some non-limiting examples, the device 3700 further comprisesadditional layers, coatings and/or components. By way of non-limitingexamples, although not shown, the device 3700 may comprise at least oneof a polarizer, a wave plate, a touch sensor, a color filter, a coverglass and/or an adhesive, which may be arranged beyond the device region3705.

In some non-limiting examples, the device 3700 is an OLED displaydevice. In some non-limiting examples, such device 3700 may be an AMOLEDdisplay device in which the at least one semiconducting layer 130generally includes an emitter layer, which may be formed, by way ofnon-limiting example, by doping a host material with an emittermaterial, including without limitation, a fluorescent emitter, aphosphorescent emitter and/or a TADF emitter. In some non-limitingexamples, a plurality of emitter materials may be doped into the hostmaterial to form the emitter layer.

In some non-limiting examples, elements, coatings and/or materials thatare opaque or substantially limit and/or prevent transmission of lightincident on an external surface thereof to pass through the lighttransmissive regions 2620 of the device 3700 may be arranged to beomitted from the light transmissive regions 2620, such thatexternally-incident light may be transmitted through the device 3700, insome non-limiting examples so as to pass entirely through the userdevice 3750 of which the device 3700 forms a face 3940, and/or in somenon-limiting examples, to be incident on the transceiver 3970 within theuser device 3950 beyond the face 3940 thereof defined by the device 3700without substantial interference and/or signal degradation.

In some non-limiting examples, the backplane layer of the device 3700may include at least one TFT structure 200 and/or conductive traceselectrically coupled thereto. Since, in some non-limiting examples, thematerials to form such TFT structures 200 and/or the conductive tracesmay exhibit relatively low light transmittance, in some non-limitingexamples, the TFT structures 200 and/or conductive traces may be omittedfrom the light transmissive regions 2620.

In some non-limiting examples, such TFT structures 200 and/or conductivetraces may be omitted from the light transmissive regions 2620 byarranging such elements to lie within the lateral aspect 410 of theemissive regions 1910, including as shown by way of non-limitingexample, in FIG. 3 .

In some non-limiting examples, one or more layers of the backplane layermay be omitted from all or a part of at least one of the lighttransmissive regions 2620, including without limitation, one or more ofthe buffer layer 210, the semiconductor active area, the gate insulatinglayer 230, the interlayer insulating layer 250, the TFT electrode layer,and/or the insulating layer for forming the TFT structure 200.

In some non-limiting examples, one or more layers of the frontplane maybe omitted from all or a part of at least one of the light transmissiveregions 2620, including without limitation, one or more of thematerial(s) used to form the first electrode 120, the PDL 440, the atleast one semiconducting layer 130 and/or layers thereof and/or thesecond electrode 140.

In some non-limiting examples, the TFT insulating layer 280, the atleast one semiconducting layer 130 and/or layers thereof and/or theencapsulation layer may be substantially light-transmissive such thatproviding such layers within all or a part of at least one of the lighttransmissive regions 2620 may not substantially affect transmission ofexternal light therethrough. Accordingly, in some non-limiting examples,such layers may continue to be provided within all or a part of at leastone of the light transmissive regions 2620.

The light transmissive region 2620 extends along at least part of thelateral aspect 420 of non-emissive regions 1920. As is shown by dashedoutline, in some non-limiting examples, at least some of the backplaneand/or frontplane layers are omitted from all or a part of the at leastone light transmissive region 2620 to facilitate transmission of lighttherethrough.

Turning now to FIG. 4A, there is shown a simplified view of across-section of a version of the device 3700, shown as device 3900 a,according to an example. The device 3900 a serves as the face 3940 ofthe user device 3950 that has a body 3960 for housing a variety ofcomponents, including the at least one transceiver 3970.

The device 3900 a forming the face 3940 of the user device 3950 extendsto substantially cover the body 3960 and the components thereof,including the transceiver 3970.

In the device 3900 a, the device region 3705 is disposed over thesubstrate 110 and the device 3900 a comprises emissive regions 1910 andlight transmissive regions 2620 in an alternate arrangement along atleast one array axis in a direction parallel to the plane of thesubstrate 110. By way of non-limiting example, the device 3900 a may beconfigured to substantially inhibit transmission of external lightincident thereon from a direction that is substantially transverse tothe plane of the surface of the device 3900 a, that is, along axis 3702,other than through all or a part of the at least one light transmissiveregion 2620.

In some non-limiting examples, the device 3900 a may be substantiallyopaque, except within all or a part of the lateral aspect 420 of atleast one of the light transmissive regions 2620. By way of non-limitingexample, although not explicitly shown in the figure, opaque and/orlight-attenuating layers, coatings and/or materials for forming variousparts of the device 3900 a may be arranged beyond the lateral aspects420 of the light transmissive regions 2620, such that certain parts ofthe device 3900 a including the emissive regions 1910 are substantiallyopaque and substantially preclude the transmission of light, while thelight transmissive regions 2620 allow passage of external light incidentthereon therethrough.

In some non-limiting examples, the device 3700 further includes at leastone opaque coating 3910. In some non-limiting examples, such opaquecoating 3910 may comprise a plurality of apertures 3920 each definingthe closed boundary 3701 of a corresponding light transmissive region2620. Such opaque coating 3910 may, in some non-limiting examples, beconfigured to permit transmission of light through the apertures 3920and thus through the closed boundary 3701 of the light transmissiveregions 2620 defined thereby.

In some non-limiting examples, the opaque coating 3910 may be configuredto reduce transmission of light therethrough other than through theapertures 3920 thereof. By way of non-limiting example, the opaquecoating 3910 may reduce transmission of light by about 30% or greater,about 40% or greater, about 50% or greater, about 60% or greater, about70% or greater, about 80% or greater, about 90% or greater and/or about95% or greater. In some non-limiting examples, the transmission of lightthrough the apertures 3920 may be substantially unaffected.

In some non-limiting examples, the opaque coating 3910 may be configuredto filter any external light incident thereon, such that light may beselectively transmitted through the apertures 3920 that define the lighttransmissive regions 2620.

In some non-limiting examples, the opaque coating 3910 may be configuredto reflect any external light incident thereon other than the apertures3920. In some non-limiting examples, the opaque coating 3910 may beformed of a material and/or otherwise configured to absorb any externallight incident thereon other than the apertures 3920.

FIGS. 4B-4F show various non-limiting examples of different locations ofsuch opaque coating 3910 throughout the simplified view of the device3700 shown in FIG. 4A.

FIG. 4B shows a version 3900 b of the device 3700, according to anexample, in which the opaque coating 3910 is disposed on a surface ofthe substrate 110 that is opposite to the exposed surface 111 of thesubstrate 110 upon which the device region 3705 is disposed. The lighttransmissive regions 2620 are substantially devoid of the material forforming the opaque coating 3910 and accordingly, the transmission ofexternal light through the apertures 3920 and the associated lighttransmissive regions 2620 is substantially unaffected. The opaquecoating 3910 is arranged to extend across the lateral aspect 410 of theemissive regions 1910 and across the lateral aspect 420 of thenon-emissive regions 1920 other than the apertures 3920 that define thelight transmissive regions 2620 (intermediate regions) between adjacentemissive regions 1910 and/or light transmissive regions 2620. As aresult, by way of non-limiting example, any transmission of externallight incident on the emissive regions 1910 and/or the intermediateregions is substantially inhibited, including without limitation due tothe presence of the opaque coating 3910. In some non-limiting examples,this may allow external light incident on the device 3900 b to beselectively transmitted in certain configurations as discussed below.

FIG. 4C shows a version 3900 c of the device 3700, according to anexample, in which the opaque coating 3910 is disposed between thesubstrate 110 and the device region 3705 deposited on an exposed surface111 thereof. The opaque coating 3910 is arranged to extend across thelateral aspect 410 of the emissive regions 1910 and across the lateralaspect 420 of the intermediate regions such that, by way of non-limitingexample, any transmission of external light incident on the emissiveregions 1910 and/or the intermediate regions is substantially inhibited,including without limitation due to the presence of the opaque coating3910. In some non-limiting examples, the opaque coating 3910 may bedisposed on the exposed surface 111 of the substrate 110 prior todeposition of the materials for forming the TFT structures 200 in thedevice region 3705 such that the TFT structures 200 lie between theopaque coating 3910 and the at least one first electrode 120.

FIG. 4D shows a version 3900 d of the device 3700, according to anexample, in which the opaque coating 3910 is arranged within the deviceregion 3705. The opaque coating 3910 is arranged to extend across thelateral aspect 410 of the emissive regions 1910 and across the lateralaspect 420 of the intermediate regions such that, by way of non-limitingexample, any transmission of external light incident on the emissiveregions 1910 and/or the intermediate regions is substantially inhibited,including without limitation due to the presence of the opaque coating3910. By way of non-limiting example, the opaque coating 3910 may beprovided in and/or by one or more layers of materials(s) for: formingthe TFT structure 200, forming the first electrode 120, forming the PDL440 and/or for forming the second electrode 140. In some non-limitingexamples, the opaque coating 3910 may be formed using materials inaddition to such material(s). In some non-limiting examples, the opaquecoating 3910 is disposed between the emissive region 1910 and thesubstrate 110. In some non-limiting examples, the opaque coating 3910may be disposed on an exposed surface 111 of the TFT insulating layer280. In some non-limiting examples, the opaque coating 3910 may bearranged substantially in the same plane as the first electrode 120.

FIG. 4E shows a version 3900 e of the device 3700, according to anexample, in which the opaque coating 3910 is arranged within the deviceregion 3705 but does not substantially overlap with the emissive regions1910 of the device 3900 e, such that both the emissive regions 1910 andthe light transmissive regions 2620 are substantially devoid of thematerial for forming the opaque coating 3910. Rather, the opaque coating3910 is arranged to be substantially confined to and to extend acrossthe lateral aspect 420 of the intermediate regions such that, by way ofnon-limiting example, any transmission of external light incident on theintermediate regions is substantially inhibited, including withoutlimitation to the presence of the opaque coating 3910. In somenon-limiting examples, the opaque coating has at least one opening 3980that is coincident with the at least one emissive region 1910 to permitlight emitted by such corresponding at least one emissive region 1910 toemit light and to have such light to pass through the opaque coating3910. In some non-limiting examples, such configuration may beappropriate where the emissive regions 1910 are substantially opaque. Insome non-limiting examples, the opaque coating 3910 may be formed by,and/or as part of the PDL 440 and/or by, and/or as part of the secondelectrode 140 such that the opaque coating is deposited on a same layeras the second electrode 140 and such that the opaque coating 3910 has atleast one opening 3980 that lies within the PDL 440 coincident with theat least one emissive region 1910 to permit light emitted by suchcorresponding at least one emissive region 1910 to emit light and tohave such light to pass through the opaque coating 3910. In somenon-limiting examples, the opaque coating 3910 may be disposed over thesecond electrode 140. By way of non-limiting example, the opaque coating3910 may be an electrically conductive material, including withoutlimitation, a metal, that is electrically and/or physically coupled tothe second electrode 140. In such non-limiting example, the opaquecoating 3910 may also act as an auxiliary electrode 1750 for reducing aneffective sheet resistance of the second electrode 140. In somenon-limiting examples, the opaque coating 3910 may be arranged to bedeposited over the second electrode 140, so as to lie between the secondelectrode 140 and the encapsulation layer.

FIG. 4F shows a version 3900 f of the device 3700, according to anexample, in which the opaque coating 3910 is disposed on and/or over thedevice region 3705 but does not substantially overlap with the emissiveregions 1910 of the device 3900 f (by virtue of openings 3980therewithin), such that both the emissive regions 1910 and the lighttransmissive regions 2620 are substantially devoid of the material forforming the opaque coating 3910 and accordingly, the transmission ofexternal light through the emissive regions 1910 and through theapertures 3920 and the associated light transmissive regions 2620 issubstantially unaffected. Rather, the opaque coating 3910 is arranged tobe substantially confined to and to extend across the lateral aspect 420of the intermediate regions such that, by way of non-limiting example,any transmission of external light incident on the intermediate regionsis substantially inhibited, including without limitation to the presenceof the opaque coating 3910. In some non-limiting examples, the opaquecoating 3910 may be disposed over the encapsulation layer In somenon-limiting examples, each light transmissive region 2620 may besubstantially devoid of the second electrode 140. In some non-limitingexamples, the device 3700 may comprise a patterning coating, such as,without limitation, an NIC 810, disposed within the closed boundary 3701of each light transmissive region 2620 defined by a correspondingaperture 3920, to preclude deposition of a conductive coating 830thereon to form the second electrode 140 therein. By way of non-limitingexample, the at least one semiconducting layer 130 may extend laterallyacross the light transmissive regions 2620 and the NIC 810 may bedisposed thereon within the light transmissive regions 2620. In somenon-limiting examples, the emissive regions 1910 may be substantiallydevoid of the NIC 810.

Those having ordinary skill in the relevant art will appreciate that insome non-limiting examples, a patterning coating, including withoutlimitation, an NIC 810, may be deposited on a first portion of anexposed layer surface 111 to substantially preclude deposition withinsuch first portion of a coating, that may not necessarily beelectrically conductive. By way of non-limiting example, such firstportion may comprise the entirety of the lateral aspects 420 of thenon-emissive regions 1920 other than those of the light transmissiveregions, so as to facilitate deposition of the opaque coating 3910 withapertures 3920 corresponding only to the light transmissive regions2620. By way of further non-limiting examples, such first portion mayfurther comprise the lateral aspects 410 of the emissive regions 1910 soas to facilitate deposition of the opaque coating 3910 with bothapertures 3920 corresponding only to the light transmissive regions 2620and openings 3980 corresponding to the emissive regions 1910.

In some non-limiting examples, the opaque coating 1910 deposited on thepatterning coating, which may in some non-limiting examples be the NIC810, may comprise a purely optical non-conductive coating or anelectrically conductive coating 830 that also has optical coatingcharacteristics.

In some non-limiting examples, the light transmissive regions 2620 maybe substantially devoid of the PDL 440. By way of non-limiting example,such configuration may further enhance light transmission through thelight transmissive regions 2620, including without limitation, bymitigating distortion of a color and/or associated wavelength spectrumof the external light transmitted therethrough.

In some non-limiting examples, a distinctive and non-uniform diffractionpattern, affected by the shape of the closed boundary 3701 of the lighttransmissive regions 2620 defined by a corresponding aperture 3920, maycause interference that distorts the external light transmittedtherethrough, and may adversely impact an ability to facilitatemitigation of interference caused by the diffraction pattern.

In some non-limiting examples, a distinctive and non-uniform diffractionpattern may result from a shape of an aperture 3920 that causes distinctand/or angularly separated diffraction spikes in the diffractionpattern.

In some non-limiting examples, a first diffraction spike may bedistinguished from a second proximate diffraction spike by simpleobservation, such that the total number of diffraction spikes along afull angular revolution may be counted. However, in some non-limitingexamples, especially where the number of diffraction spikes is large, itmay be more difficult to identify individual diffraction spikes. In suchcircumstances, the distortion effect of the resulting diffractionpattern may in fact facilitate mitigation of the interference causedthereby, since the distortion effect tends to be blurred and/ordistributed more evenly distributed. Such blurring and/or more evendistribution of the distortion effect may, in some non-limitingexamples, be more amenable to mitigation, including without limitation,by optical post-processing techniques, in order to recover the originalimage and/or information contained therein.

In some non-limiting examples, the ability to facilitate mitigation ofthe interference caused by the diffraction pattern may increase as thenumber of diffraction spikes increases. In some non-limiting examples,beneficial increases in the ability to facilitate mitigation of theinterference caused by the diffraction pattern may be reflected in anumber of diffraction spikes in the diffraction pattern across a fullangular revolution that is greater than about 4, greater than about 6,greater than about 8, greater than about 10, greater than about 12,greater than about 14 and/or greater than about 16.

In some non-limiting examples, a distinctive and non-uniform diffractionpattern may result from a shape of an aperture 3920 that increases alength of a pattern boundary P_(B) (FIG. 8B) within the diffractionpattern between region(s) of high intensity of light and region(s) oflow intensity of light as a function of a pattern circumference P_(C)(FIG. 8B) of the diffraction pattern and/or that reduces a ratio of thepattern circumference P_(C) relative to the length of the patternboundary P_(B) thereof.

In some non-limiting examples, beneficial increases in the ability tofacilitate mitigation of the interference caused by the diffractionpattern may be reflected in a ratio of the pattern circumference P_(C)of the diffraction pattern relative to the length of the patternboundary P_(B) that is greater than about 0.4, greater than about 0.5,greater than about 0.6, greater than about 0.7, greater than about 0.75,greater than about 0.8, greater than about 0.9 and/or greater than about0.95.

Without wishing to be bound by any specific theory, it is postulatedthat devices 3700 having closed boundaries 3701 of light transmissiveregions 2620 defined by a corresponding aperture 3920 that are polygonalmay exhibit a distinctive and non-uniform diffraction pattern thatadversely impacts an ability to facilitate mitigation of interferencecaused by the diffraction pattern relative to devices 3700 having closedboundaries 3701 of light transmissive regions 2620 defined by acorresponding aperture 3920 that is non-polygonal.

In the present disclosure, the term “polygonal” may refer generally toshapes, figures, closed boundaries 3701 and/or perimeters formed by afinite number of linear and/or straight segments and the term“non-polygonal” may refer generally to shapes, figures, closedboundaries 3701 and/or perimeters that are not polygonal. By way ofnon-limiting example, a closed boundary 3701 formed by a finite numberof linear segments and at least one non-linear or curved segment isconsidered non-polygonal.

Without wishing to be bound by a particular theory, it is postulatedthat when the closed boundary 3701 of the light transmissive regions2620 defined by a corresponding aperture 3920 comprises at least onenon-linear and/or curved segment, external light incident thereon andtransmitted therethrough may exhibit a less distinctive and/or moreuniform diffraction pattern that facilitates mitigation of interferencecaused by the diffraction pattern.

In some non-limiting examples, a device 3700 having a closed boundary3701 of the light transmissive regions 2620 defined by a correspondingaperture 3920 that is substantially elliptical and/or circular mayfurther facilitate mitigation of interference caused by the diffractionpattern.

In some non-limiting examples, the closed boundary 3701 of the lighttransmissive regions 2620 defined by the apertures 3920 may besymmetrical relative to at least one of the configuration axes 3703,3704.

A wide variety in shapes and configurations of closed boundaries 3701 ofsuch light transmissive regions 2620 defined by the apertures 3920 maybe appropriate. FIGS. 5A-5I illustrate non-limiting examples of an arrayof light transmissive regions 2620 (for purposes of simplicity ofillustration, the intervening emissive region(s) 1910 have beenomitted).

In some non-limiting examples, such as those shown in FIGS. 5A-5C, theclosed boundaries 3701 of each light transmissive region 2620 defined bythe apertures 3920 in an array thereof may be substantially elliptical.In some non-limiting examples, such boundaries 3701 may be oriented tobe symmetrical about at least one of the configuration axes 3703, 3704.

In some non-limiting examples, such as those shown in FIGS. 5D-5G, theclosed boundaries 3701 of each light transmissive region 2620 defined bythe apertures 3920 in an array thereof may be defined by a finiteplurality of convex rounded segments. In some non-limiting examples, atleast some of these segments coincide at concave notches or peaks.

FIG. 5H shows, by way of non-limiting example, the closed boundaries3701 of each light transmissive region 2620 defined by the apertures3920 in an array thereof may be defined by a finite plurality of concaverounded segments. In some non-limiting examples, at least some of thesesegments coincide at convex notches or peaks.

FIG. 5I shows, by way of non-limiting example, the closed boundaries3701 of each light transmissive region 2620 defined by the apertures3920 in an array thereof may be defined by a finite plurality of linearsegments joined at their ends by rounded corners. In the example shown,the closed boundary 3701 comprises four linear segments to define arounded rectangle.

In some non-limiting examples, the closed boundaries 3701 of each lighttransmissive region 2620 defined by the apertures 3920 in an arraythereof has a common shape. In some non-limiting examples, the closedboundaries 3701 of the light transmissive regions 2620 defined by theapertures 3920 in an array thereof may be of different sizes and/orshapes.

In some non-limiting examples, the light transmissive regions 2620 of adevice 3700 may be arranged in various configurations, including withoutlimitation, polygonal, including without limitation, triangular(including without limitation trigonal), square, rectangular,parallelogram and/or hexagonal arrangements, the latter of which isshown by way of non-limiting example in FIG. 6 .

In some non-limiting examples, where the configuration is polygonal, theconfiguration may be aligned along a plurality of configuration axes3703, 3704 that define the respective sides of a polygon defined by suchconfiguration, in which light transmissive regions 2620 form verticesthereof. In some non-limiting examples, one or more light transmissiveregions 2620 may be located within such polygon.

However configured, in some non-limiting examples, closed boundaries3701 of the light transmissive regions 2620 defined by the apertures3920 may be interspersed with at least one neighboring emissive region1910 in an alternating pattern along at least one configuration axis3703, 3704.

EXAMPLES

The following examples are for illustrative purposes only and are notintended to limit the generality of the present disclosure in anyfashion.

As shown by way of non-limiting example in FIG. 7 , light was emitted byan external source 4210 to be incident on and transmitted through aplurality of sample OLED devices 3700 having various exampleconfigurations of closed boundaries 3701 of such light transmissiveregions 2620 defined by the apertures 3920. By way of non-limitingexamples, a camera was used as the detector 4220 to capture an image ofthe light 4225 emitted by the source 4210 incident on the sample device3700 and transmitted therethrough by the light transmissive regions2620. As shown schematically in the figure, the light emitted by thesource 4210 is in the form of a collimated circular cylindrical beam4215 having a diameter or spot size of do. Also as shown schematicallyin the figure, after passing through the device 3700 and in particular,the closed boundaries 3701 of the light transmissive regions 2620thereof defined by the apertures 3920, the light 4225 captured by thedetector 4220 may be a divergent beam as a result of diffractioncharacteristics imparted to the light 4225 by the shape of the closedboundaries 3701 of the light transmissive regions 2620 defined by theapertures 3920.

In the figure, the source 4210 is shown as illuminating the substrate110 of the sample device 3700 with the beam 4215, and the detector 4220captures light 4225 that is emitted through the device region 3705.Those having ordinary skill in the art will appreciate that in somenon-limiting examples, the orientation of the sample device 3700 may bereversed, such that the source 4210 illuminates the device region 3705with the beam 4215, and the detector 4220 captures light 4225 that isemitted through the substrate 110.

Example 1

FIG. 8A is an image of the light 4225 captured by the detector 4220 fora first reference sample OLED device 3700, in which the closedboundaries 3701 of the light transmissive regions 2620 defined by theapertures 3920 are substantially rectangular, where the sides of theboundary 3701 are substantially aligned along two configuration axes3703, 3704, at right angles.

FIG. 8B is an idealized schematic representation of the diffractionpattern captured in the image of FIG. 8A, showing a small number ofsignificant diffraction spikes aligned along the configuration axes3703, 3704. As will be discussed in greater detail in respect of FIG.9B, in some non-limiting examples, especially as the number ofdiffraction spikes increases and/or the ratio of the minimum intensityI_(min) to the maximum intensity I_(max) of the diffraction patternapproaches unity, it may become progressively more difficult todetermine the number of diffraction spikes distributed across a completeangular revolution.

To this end, in some non-limiting examples, a mechanism for quantifyingthe number of diffraction spikes is to establish an arbitrary thresholddiameter D from the center of the diffraction pattern. In somenon-limiting examples, the diameter D may be about 3 times, about 4times, about 5 times, about 7 times, about 10 times and/or about 15times the spot size do. Once such diameter D has been established, adiffraction spike may be identified and/or distinguished from adjacentdiffraction spikes by determining the number of instances in which theintensity of the diffraction pattern crosses the diameter D across acomplete angular revolution (with the number of diffraction spikescorresponding to ½ of the number of such crossings). Those havingordinary skill in the relevant art will appreciate that the number ofdiffraction spikes thus identified may, in some non-limiting instancesdepend on the value of the diameter D, since if the diameter D exceedsthe maximum intensity I_(max) of a given diffraction spike, there willnot be any crossings associated with such diffraction spike.

By way of non-limiting example, in an ideal situation, where there issubstantially no diffraction imparted by the shape of the shape of theclosed boundary 3701 of the light transmissive regions 2620 defined by acorresponding aperture 3920, the “diffraction” pattern obtained afterbeing transmitted therethrough will be substantially circular, with nodiffraction spikes. As such, the pattern boundary P_(B) betweenregion(s) of high intensity of light and region(s) of low intensity oflight will be the circumference of such circular pattern, which willalso be the pattern circumference P_(C). Those having ordinary skill inthe relevant art will appreciate that the length of such patternboundary P_(B) will be at a minimum for a given pattern circumferenceP_(C).

However, as diffraction increases, so as to create diffraction spikes,such as shown in FIG. 8B, the pattern boundary P_(B) will tend tocomprise segments, corresponding to such diffraction spikes, that extendsubstantially radially away from the centre of the pattern, followed bysegments RS that extend substantially radially toward the centre(collectively “radial segments”). Thus, the presence of such diffractionspikes tends to increase the length of the pattern boundary P_(B) as afunction of the pattern circumference P_(C).

In the figure, the solid outline of the diffraction pattern reflects theboundary pattern P_(B), while the dotted circular outline that overlapsthe curved portions of the boundary pattern P_(B) reflects the patterncircumference P_(C) of the diffraction pattern. As can be seen, thelength of the (in the FIG. 8 ) radial segments identified as RS are longand increase the length of the boundary pattern P_(B), such that theratio of the pattern circumference P_(C) to the boundary pattern P_(B)is considerably less than unity and may approach 0.

Example 2

FIG. 9A is an image of the light 4225 captured by the detector 4220 fora second sample OLED device 3700, in which closed boundaries 3701 of thelight transmissive regions 2620 defined by the apertures 3920 aresubstantially circular.

FIG. 9B is a schematic representation of a diffraction pattern for thecaptured image of FIG. 9A, showing a greater number of substantiallyevenly distributed diffraction spikes that vary in intensity by asubstantially lesser degree. The increased number of diffraction spikesand the corresponding reduction in variation in intensity show a moreuniform response that reflects a blurring of the diffraction pattern,which in some non-limiting examples, may facilitate mitigation of theinterference of such diffraction pattern. Such mitigation may, in somenon-limiting examples, result in substantial elimination thereof and/ora reduced amount of processing to achieve a comparable mitigationresult.

As shown in the figure, the number of diffraction spikes increases.However, as it does, the diffraction spikes will tend to overlap, suchthat effectively, the pattern circumference P_(C) of the resultingdiffraction pattern increases, and the length of radial segments RS arereduced, with the result that the length of the pattern boundary P_(B)will again be reduced as a function of the pattern circumference P_(C)and/or the ratio of the pattern circumference to the length of thepattern boundary P_(B) increases and approaches unity.

Terminology

References in the singular form include the plural and vice versa,unless otherwise noted.

As used herein, relational terms, such as “first” and “second”, andnumbering devices such as “a”, “b” and the like, may be used solely todistinguish one entity or element from another entity or element,without necessarily requiring or implying any physical or logicalrelationship or order between such entities or elements.

The terms “including” and “comprising” are used expansively and in anopen-ended fashion, and thus should be interpreted to mean “including,but not limited to”. The terms “example” and “exemplary” are used simplyto identify instances for illustrative purposes and should not beinterpreted as limiting the scope of the invention to the statedinstances. In particular, the term “exemplary” should not be interpretedto denote or confer any laudatory, beneficial or other quality to theexpression with which it is used, whether in terms of design,performance or otherwise.

The terms “couple” and “communicate” in any form are intended to meaneither a direct connection or indirect connection through someinterface, device, intermediate component or connection, whetheroptically, electrically, mechanically, chemically, or otherwise.

The terms “on” or “over” when used in reference to a first componentrelative to another component, and/or “covering” or which “covers”another component, may encompass situations where the first component isdirectly on (including without limitation, in physical contact with) theother component, as well as cases where one or more interveningcomponents are positioned between the first component and the othercomponent.

Amounts, ratios and/or other numerical values are sometimes presentedherein in a range format. Such range formats are used for convenience,illustration and brevity and should be understood flexibly to includenot only numerical values explicitly specified as limits of a range, butalso all individual numerical values and/or sub-ranges encompassedwithin that range as if each numerical value and/or sub-range had beenexplicitly specified.

Directional terms such as “upward”, “downward”, “left” and “right” areused to refer to directions in the drawings to which reference is madeunless otherwise stated. Similarly, words such as “inward” and “outward”are used to refer to directions toward and away from, respectively, thegeometric center of the device, area or volume or designated partsthereof. Moreover, all dimensions described herein are intended solelyto be by way of example of purposes of illustrating certain embodimentsand are not intended to limit the scope of the disclosure to anyembodiments that may depart from such dimensions as may be specified.

As used herein, the terms “substantially”, “substantial”,“approximately” and/or “about” are used to denote and account for smallvariations. When used in conjunction with an event or circumstance, suchterms can refer to instances in which the event or circumstance occursprecisely, as well as instances in which the event or circumstanceoccurs to a close approximation. By way of non-limiting example, whenused in conjunction with a numerical value, such terms may refer to arange of variation of less than or equal to ±10% of such numericalvalue, such as less than or equal to ±5%, less than or equal to ±4%,less than or equal to ±3%, less than or equal to ±2%, less than or equalto ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, and/orless than equal to ±0.05%.

As used herein, the phrase “consisting substantially of” will beunderstood to include those elements specifically recited and anyadditional elements that do not materially affect the basic and novelcharacteristics of the described technology, while the phrase“consisting of” without the use of any modifier, excludes any elementnot specifically recited.

As will be understood by those having ordinary skill in the relevantart, for any and all purposes, particularly in terms of providing awritten description, all ranges disclosed herein also encompass any andall possible sub-ranges and/or combinations of sub-ranges thereof. Anylisted range may be easily recognized as sufficiently describing and/orenabling the same range being broken down at least into equal fractionsthereof, including without limitation, halves, thirds, quarters, fifths,tenths etc. As a non-limiting example, each range discussed herein maybe readily be broken down into a lower third, middle third and/or upperthird, etc.

As will also be understood by those having ordinary skill in therelevant art, all language and/or terminology such as “up to”, “atleast”, “greater than”, “less than”, and the like, may include and/orrefer the recited range(s) and may also refer to ranges that may besubsequently broken down into sub-ranges as discussed herein.

As will be understood by those having ordinary skill in the relevantart, a range includes each individual member of the recited range.

GENERAL

The purpose of the Abstract is to enable the relevant patent office orthe public generally, and specifically, persons of ordinary skill in theart who are not familiar with patent or legal terms or phraseology, toquickly determine from a cursory inspection, the nature of the technicaldisclosure. The Abstract is neither intended to define the scope of thisdisclosure, nor is it intended to be limiting as to the scope of thisdisclosure in any way.

The structure, manufacture and use of the presently disclosed exampleshave been discussed above. The specific examples discussed are merelyillustrative of specific ways to make and use the concepts disclosedherein, and do not limit the scope of the present disclosure. Rather,the general principles set forth herein are considered to be merelyillustrative of the scope of the present disclosure.

It should be appreciated that the present disclosure, which is describedby the claims and not by the implementation details provided, and whichcan be modified by varying, omitting, adding or replacing and/or in theabsence of any element(s) and/or limitation(s) with alternatives and/orequivalent functional elements, whether or not specifically disclosedherein, will be apparent to those having ordinary skill in the relevantart, may be made to the examples disclosed herein, and may provide manyapplicable inventive concepts that may be embodied in a wide variety ofspecific contexts, without straying from the present disclosure.

In particular, features, techniques, systems, sub-systems and methodsdescribed and illustrated in one or more of the above-describedexamples, whether or not described an illustrated as discrete orseparate, may be combined or integrated in another system withoutdeparting from the scope of the present disclosure, to createalternative examples comprised of a combination or sub-combination offeatures that may not be explicitly described above, or certain featuresmay be omitted, or not implemented. Features suitable for suchcombinations and sub-combinations would be readily apparent to personsskilled in the art upon review of the present application as a whole.Other examples of changes, substitutions, and alterations are easilyascertainable and could be made without departing from the spirit andscope disclosed herein.

All statements herein reciting principles, aspects and examples of thedisclosure, as well as specific examples thereof, are intended toencompass both structural and functional equivalents thereof and tocover and embrace all suitable changes in technology. Additionally, itis intended that such equivalents include both currently-knownequivalents as well as equivalents developed in the future, i.e., anyelements developed that perform the same function, regardless ofstructure.

Accordingly, the specification and the examples disclosed therein are tobe considered illustrative only, with a true scope of the disclosurebeing disclosed by the following numbered claims:

What is claimed is:
 1. An opto-electronic display device comprising asubstrate and a plurality of layers disposed on a first surface thereof,that extend laterally in a substantially lateral aspect, comprising: aplurality of light transmissive regions, each extending through thedevice in a direction extending substantially transversely to thelateral aspect and allowing passage of light therethrough; at least oneemissive region disposed between adjacent light transmissive regions,each comprising first and second electrodes and at least onesemiconducting layer therebetween, in layers, for emitting light fromthe device; and at least one opaque coating, for substantiallyprecluding light transmission therethrough, and having at least oneaperture therein defining a closed boundary of a corresponding lighttransmissive region, wherein the at least one opaque coating issubstantially continuous in the lateral aspect between adjacent lighttransmissive regions.
 2. The display device of claim 1, wherein the atleast one light transmissive region is substantially devoid of anylight-attenuating component within the device.
 3. The display device ofclaim 1, wherein the lateral aspect of at least one light transmissiveregion is substantially devoid of any second electrode.
 4. The displaydevice of claim 1, wherein the lateral aspect of at least one lighttransmissive region is substantially devoid of the at least onesemiconducting layer.
 5. The display device of claim 1, wherein at leastone of the at least one semiconducting layer extends across the lateralaspect of at least one light transmissive region and a patterningcoating is disposed on an exposed layer surface thereof within thelateral aspect of such light transmissive region to substantiallypreclude deposition of a closed conductive coating thereon to form thesecond electrode.
 6. The display device of claim 1, wherein the at leastone light transmissive region is substantially devoid of any pixeldefinition layer (PDL).
 7. The display device of claim 6, wherein the atleast one emissive region is defined, in its lateral extent, by alateral extent of an aperture in the PDL corresponding thereto.
 8. Thedisplay device of claim 1, wherein a plurality of emissive regions isdisposed between adjacent light transmissive regions.
 9. The displaydevice of claim 8, wherein the plurality of emissive regions correspondsto a pixel and each of the plurality of emissive regions thereincorresponds to a sub-pixel thereof.
 10. The display device of claim 1,further comprising at least one thin film transistor (TFT) structurecorresponding to at least one emissive region and electrically coupledto at least one electrode thereof by at least one conductive trace,wherein the TFT structure and the at least one conductive trace arespaced apart in the lateral aspect from at least one of the lighttransmissive regions.
 11. The display device of claim 10, wherein the atleast one opaque coating overlaps, in the lateral aspect, at least oneof: the TFT structure, and the at least one conductive trace.
 12. Thedisplay device of claim 10, wherein the at least one TFT structure isdisposed, in an aspect substantially transverse to the lateral aspect,between the opaque coating and the first electrode of the at least oneemissive region.
 13. The display device of claim 10, wherein the opaquecoating is disposed, in an aspect substantially transverse to thelateral aspect, between the at least one TFT structure and the firstelectrode of the at least one emissive region.
 14. The display device ofclaim 10, wherein the opaque coating is disposed, in an aspectsubstantially transverse to the lateral aspect, between the at least oneTFT structure and the substrate.
 15. The display device of claim 1,wherein the opaque coating is configured to substantially reducetransmission of light therethrough other than through the at least oneaperture.
 16. The display device of claim 1, wherein the at least oneopaque coating is disposed on a second surface of the substrate opposedto the first surface thereof.
 17. The display device of claim 1, whereinthe at least one opaque coating is disposed on the first surface of thesubstrate.
 18. The display device of claim 1, wherein the at least oneopaque coating is disposed, in an aspect substantially transverse to thelateral aspect, between the at least one emissive region and thesubstrate.
 19. The display device of claim 1, wherein the at least oneopaque coating is disposed on a same layer as the second electrode ofthe at least one emissive region and further comprises at least oneopening corresponding to the at least one emissive region, to permitlight emitted thereby to pass therethrough.
 20. The display device ofclaim 1, wherein the at least one opaque coating is disposed such thatthe second electrode of the at least one emissive region extends, in anaspect substantially transverse to the lateral aspect, between it andthe at least one semiconducting layer, and wherein the at least oneopaque coating further comprises at least one opening corresponding tothe at least one emissive region, to permit light emitted thereby topass therethrough.
 21. The display device of claim 1, further comprisingan encapsulation coating arranged between the second electrode of the atleast one emissive region and the at least one opaque coating.
 22. Thedisplay device of claim 1, further comprising a patterning coatingdisposed on an exposed layer surface in a portion of the lateral aspectto substantially preclude deposition of a closed coating thereon to formthe at least one opaque coating.
 23. The display device of claim 22,wherein the portion corresponds to the lateral aspect of at least oneaperture.
 24. The display device of claim 22, wherein the portioncorresponds to the lateral aspect of at least one emissive region. 25.The display device of claim 22, wherein the at least one aperture has ashape that alters at least one characteristic of a diffraction patternexhibited when light is transmitted through the corresponding lighttransmissive region to facilitate mitigating interference by suchdiffraction pattern.
 26. The display device of claim 1, wherein theboundary comprises at least one non-linear segment.
 27. The displaydevice of claim 1, wherein the boundary has a shape that issubstantially at least one of: circular and elliptical.
 28. The displaydevice of claim 1, wherein the boundary has a shape that comprises atleast one convex rounded segment.
 29. The display device of claim 28,wherein two of the at least one convex rounded segments coincide at aconcave notch.
 30. The display device of claim 1, wherein the displaydevice is a face of a user device comprising a body housing at least onetransceiver for exchanging at least one electromagnetic signal throughat least one light transmissive region.